发明名称 Stripe-Shaped Electrode Structure Including a Main Portion with a Field Electrode and an End Portion Terminating the Electrode Structure
摘要 A semiconductor device includes a stripe-shaped electrode structure that extends from a first surface into a semiconductor portion. The electrode structure includes a main portion and an end portion terminating the electrode structure. The main portion includes a field electrode and a first portion of a field dielectric separating the field electrode from the semiconductor portion. The end portion includes a filled section in which a second portion of the field dielectric extends from a first side of the electrode structure to an opposite second side. The filled section is narrower than the main portion and a length of the filled section along a longitudinal axis of the electrode structure is at least 150% of a first layer thickness of the first portion of the field dielectric.
申请公布号 US2016351668(A1) 申请公布日期 2016.12.01
申请号 US201615166957 申请日期 2016.05.27
申请人 Infineon Technologies AG 发明人 Schwetlick Werner;Zink Robert
分类号 H01L29/40;H01L29/06;H01L29/10;H01L29/78 主分类号 H01L29/40
代理机构 代理人
主权项 1. A semiconductor device, comprising: a stripe-shaped electrode structure extending from a first surface into a semiconductor portion, wherein the electrode structure comprises a main portion and an end portion terminating the electrode structure, wherein the main portion comprises a field electrode and a first portion of a field dielectric separating the field electrode from the semiconductor portion, wherein the end portion comprises a filled section in which a second portion of the field dielectric extends from a first side of the electrode structure to an opposite second side, wherein the filled section is narrower than the main portion and a length of the filled section along a longitudinal axis of the electrode structure is at least 150% of a first layer thickness of the first portion of the field dielectric.
地址 Neubiberg DE