发明名称 |
Stripe-Shaped Electrode Structure Including a Main Portion with a Field Electrode and an End Portion Terminating the Electrode Structure |
摘要 |
A semiconductor device includes a stripe-shaped electrode structure that extends from a first surface into a semiconductor portion. The electrode structure includes a main portion and an end portion terminating the electrode structure. The main portion includes a field electrode and a first portion of a field dielectric separating the field electrode from the semiconductor portion. The end portion includes a filled section in which a second portion of the field dielectric extends from a first side of the electrode structure to an opposite second side. The filled section is narrower than the main portion and a length of the filled section along a longitudinal axis of the electrode structure is at least 150% of a first layer thickness of the first portion of the field dielectric. |
申请公布号 |
US2016351668(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
US201615166957 |
申请日期 |
2016.05.27 |
申请人 |
Infineon Technologies AG |
发明人 |
Schwetlick Werner;Zink Robert |
分类号 |
H01L29/40;H01L29/06;H01L29/10;H01L29/78 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a stripe-shaped electrode structure extending from a first surface into a semiconductor portion, wherein the electrode structure comprises a main portion and an end portion terminating the electrode structure, wherein the main portion comprises a field electrode and a first portion of a field dielectric separating the field electrode from the semiconductor portion, wherein the end portion comprises a filled section in which a second portion of the field dielectric extends from a first side of the electrode structure to an opposite second side, wherein the filled section is narrower than the main portion and a length of the filled section along a longitudinal axis of the electrode structure is at least 150% of a first layer thickness of the first portion of the field dielectric. |
地址 |
Neubiberg DE |