Charge dissipation in electrostatically driven devices

摘要

A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems ("MEMS") device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.