发明名称 |
Method and apparatus for pretreating a substrate prior to electroplating |
摘要 |
A method including the step of providing a substrate having a contact pad, and an under bump metallurgy overlying the contact pad, and a photoresist layer overlying the under bump metallurgy, and wherein the photoresist layer has an opening defined therein down to the under bump metallurgy and aligned with the contact pad. Pretreating the substrate with the first wetting solution prior to plating a first seed layer over the under bump metallurgy. Thereafter, plating a first seed layer is plated onto the under bump metallurgy.
|
申请公布号 |
US6941957(B2) |
申请公布日期 |
2005.09.13 |
申请号 |
US20030621252 |
申请日期 |
2003.07.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
CHEN KUO-FENG;YU HSIU-MEI;TSENG CHARLES;LIN TA-YANG |
分类号 |
H01L21/288;H01L21/60;H01L23/485;(IPC1-7):B08B3/02 |
主分类号 |
H01L21/288 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|