发明名称 Enhanced write abort mechanism for non-volatile memory
摘要 In a non-volatile memory (NVM) device having a controller and a non-volatile memory array controlled by the controller a voltage supervisor circuit monitors an output of a voltage supply powering the NVM device. The voltage supervisor circuit may be part of the NVM device or coupled to it. The voltage supervisor circuit is configured to assert a "low-voltage" signal responsive to detecting the output of the voltage supply powering the NVM device dropping below a predetermined value. The controller is configured to write data into the memory array while the "low-voltage" signal is deasserted and to suspend writing data while the "low-voltage" signal is asserted. In response to assertion of the "low-voltage" signal, the controller completes a write cycle/program operation, if pending, and prevents any additional write cycles/program operation(s) during assertion of the "low-voltage" signal.
申请公布号 US7599241(B2) 申请公布日期 2009.10.06
申请号 US20070890734 申请日期 2007.08.06
申请人 SANDISK CORPORATION 发明人 SPROUSE STEVEN T.;PARIKH DHAVAL;KAPOOR ARJUN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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