发明名称 |
Magnetic memory devices and methods of forming the same |
摘要 |
The inventive concepts provide magnetic memory devices and methods forming the same. The method includes sequentially forming a first magnetic conductive layer and a capping layer on a substrate, patterning the capping layer and the first magnetic conductive layer to form a first magnetic conductive pattern and a capping pattern, forming an interlayer insulating layer exposing the capping pattern on the substrate, removing the capping pattern to expose the first magnetic conductive pattern, forming a tunnel barrier layer and a second magnetic conductive layer on the first magnetic conductive pattern and the interlayer insulating layer, and patterning the second magnetic conductive layer and the tunnel barrier layer to form a second magnetic conductive pattern and a tunnel barrier pattern. |
申请公布号 |
US9583697(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201514716913 |
申请日期 |
2015.05.20 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Keewon;Kang Minah;Park Soonoh;Park Yong Sung;Oh Sechung |
分类号 |
H01L43/08;G11C11/16;H01L43/02;H01L43/12;H01L43/10;H01L27/22 |
主分类号 |
H01L43/08 |
代理机构 |
Myers Bigel, P.A. |
代理人 |
Myers Bigel, P.A. |
主权项 |
1. A semiconductor device comprising:
a contact plug pattern in a first interlayer dielectric layer formed on a substrate, top surfaces of the contact plug pattern and the first interlayer dielectric layer being substantially coplanar; a first electrode pattern on the contact plug pattern and conductively coupled to the contact plug pattern; a first magnetic conductive pattern on the first electrode pattern; a second magnetic conductive pattern on the first magnetic conductive pattern; a tunnel barrier pattern between the first magnetic conductive pattern and the second magnetic conductive pattern and having a first surface on which the second magnetic conductive pattern is formed and a second surface that is opposite the first surface; and a metal oxide layer that is on a portion of the second surface of the tunnel barrier pattern that does not contact the first magnetic conductive pattern and that is adjacent, in a direction parallel to a top surface of the substrate, a side surface of a widest portion of the first magnetic conductive pattern, wherein a bottom surface of the metal oxide layer is nearer the second surface of the tunnel barrier pattern than a bottom surface of the first magnetic conductive pattern. |
地址 |
KR |