Method for producing semiconductor light emitting element

摘要

A method for producing a semiconductor light emitting element includes a wafer preparation step, a first irradiation step, a second irradiation step, and a wafer division step. The wafer includes a semiconductor structure on a first main surface of a substrate. In the first irradiation step, a first light-condensing position in the thickness direction of the substrate is irradiated with a first laser beam from a second main surface of the substrate to form an altered area. The second main surface is opposite to the first main surface. In the second irradiation step, a second light-condensing position is irradiated with a second laser beam. The second light-condensing position is located at a position in the altered area different from the first light-condensing position. In the wafer division step, the wafer is divided into individual light emitting elements.

主权项

1. A method for producing a semiconductor light emitting element comprising:
providing a wafer including a semiconductor structure on or above a first main surface of a substrate; irradiating a first light-condensing position in a thickness direction of the substrate with a first laser beam from a side of a second main surface of the substrate to form an altered area in which the first light-condensing position is positioned therein and voids are formed therein, the second main surface being opposite to the first main surface; irradiating a second light-condensing position with a second laser beam, the second light condensing portion being located at a position in the altered area, the position being different from the first light-condensing position in the thickness direction of the substrate; and dividing the wafer into individual semiconductor light emitting elements.