Silicon carbide schottky diode

摘要

A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H—SiC body.

主权项

1. A semiconductor device, comprising:
a SiC substrate; a silicon face SiC epitaxial body formed on a first surface of a said SiC substrate; a Schottky metal barrier formed on said silicon face of said SiC epitaxial body; and a back power electrode on a second surface of said SiC substrate wherein said Schottky metal barrier is configured to exhibit a voltage characterization of the barrier that reflects uniformity between said Schottky metal barrier and said silicon.