| 发明名称 | Methods of annealing after deposition of gate layers | ||
| 摘要 | A method of fabricating a gate structure includes depositing a high dielectric constant (high-k) dielectric layer over a substrate. The method further includes performing a multi-stage preheat high-temperature anneal. Performing the multi-stage preheat high-temperature anneal includes performing a first stage preheat at a temperature in a range from about 400° C. to about 600° C., performing a second stage preheat at a temperature in a range from about 700° C. to about 900° C., and performing a high temperature anneal at a peak temperature in a range from 875° C. to about 1200° C. | ||
| 申请公布号 | US9620386(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201414444706 | 申请日期 | 2014.07.28 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Tsai Chun Hsiung;Yu Xiong-Fei;Huang Yu-Lien;Lin Da-Wen |
| 分类号 | H01L21/28;H01L29/40;H01L21/324;H01L29/51;H01L29/66;H01L29/49;H01L29/78 | 主分类号 | H01L21/28 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A method of fabricating a gate structure, the method comprising: depositing a high dielectric constant (high-k) dielectric layer over a substrate; and performing a multi-stage preheat high-temperature anneal, wherein performing the multi-stage preheat high-temperature anneal comprises: performing a first stage preheat at a temperature in a range from about 400° C. to about 600° C.,performing a second stage preheat at a temperature in a range from about 700° C. to about 900° C., andperforming a high temperature anneal at a peak temperature in a range from 875° C. to about 1200° C. | ||
| 地址 | TW | ||