Integrated circuits with alignment marks and methods of producing the same

摘要

Methods of producing integrated circuits with interposers and integrated circuits produced from such methods are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a base layer overlying a substrate, and forming an alignment mark overlying the base layer. A first layer is formed overlying the base layer and the alignment mark, and the first layer has a first layer thickness. A second layer is formed overlying the first layer, where the second layer has a second layer thickness and where a combined thickness of the first and second layer thicknesses is from about 2 to about 50 micrometers. A second component is formed from the second layer.

主权项

1. A method of producing an integrated circuit comprising:
forming a base layer overlying a substrate; forming an alignment mark overlying the base layer; forming a first layer overlying the base layer and the alignment mark, wherein the first layer comprises a first layer thickness; forming a second layer overlying the first layer, wherein the second layer comprises a second layer thickness, and wherein a combined thickness of the first layer thickness and the second layer thickness is from about 2 micrometers to about 50 micrometers; and forming a second component from the second layer, wherein forming the second component comprises viewing the alignment mark through the first layer and the second layer, wherein the first layer comprises a first refractive index measured at 589 nanometers, wherein the second layer comprises a second refractive index measured at 589 nanometers, and wherein the second refractive index is within about 0.05 units of the first refractive index.