Process for producing magnetoresistive effect element

摘要

This invention provides a production process in which in a process for producing a magnetoresistive effect element, noble metal atoms in a re-deposited film adhered to a side wall after element isolation are efficiently removed to prevent short-circuiting due to the re-deposited film.;The noble metal atoms are selectively removed from the re-deposited film by applying an ion beam, formed using a plasma of a Kr gas or a Xe gas, to the re-deposited film formed on the side wall of the magnetoresistive effect element after the element isolation.

主权项

1. A process for producing a magnetoresistive effect element having two ferromagnetic layers and a tunnel barrier layer located between the two ferromagnetic layers, the process comprising a step of applying an ion beam to a metal material adhered to the side wall of the tunnel barrier layer,
wherein the ion beam is formed using a plasma of a Kr gas or a Xe gas, an energy of the ion beam is not less than 10 eV and not more than 100 eV, and the metal material contains noble metal atoms and other metal atoms, and the noble metal atoms are selectively etched away from the other metal atoms in the metal material by using the ion beam.