| 摘要 |
The invention relates to a method for determining the interstitial oxygen concentration in a semiconductor material ingot (1). Said method includes the following steps: a) cutting out a section (11) of the ingot (1) along a longitudinal plane of the ingot; b) measuring the interstitial oxygen concentration at a plurality of points (Ο', A, B, C, D) distributed across a width (z) of the section (11) within the longitudinal cutting plane of the ingot (1); c) converting the measurements (Ο', A, B, C, D) of the interstitial oxygen concentration across the width (z) of the section (11) into measurements (Ο', A', B', C, D') of the interstitial oxygen concentration over a depth (h) of the section; d) extrapolating a radial profile of the interstitial oxygen concentration in the ingot (1) on the basis of the measurements ([Oi](h)) of the interstitial oxygen concentration over the depth (h) of the section (11); e) repeating Steps b) through d) in different areas distributed along the section (11), thereby producing a plurality of radial profiles of the interstitial oxygen concentration in the ingot (1); and f) correlating the radial profiles in order to determine the interstitial oxygen concentration in each area of the ingot (1). |
