| 发明名称 | Method for manufacturing nanowires | ||
| 摘要 | A method of manufacturing a nanowire includes: forming a silicon oxide layer by performing deposition of a silicon oxide on a substrate; forming a metal layer by performing deposition of a metal on the silicon oxide layer; forming a metal agglomerate by performing heat treatment on the substrate where the metal layer is formed; and growing a nanowire in an area where the metal agglomerate is formed by performing plasma treatment on the substrate where the metal agglomerate is formed. | ||
| 申请公布号 | US9453283(B2) | 申请公布日期 | 2016.09.27 |
| 申请号 | US201514624318 | 申请日期 | 2015.02.17 |
| 申请人 | Samsung Display Co., Ltd. | 发明人 | Choi Kyung Min |
| 分类号 | C23C16/56;C23C14/16;C23C16/40;C23C14/00;C25D7/06 | 主分类号 | C23C16/56 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A method of manufacturing a nanowire, the method comprising: forming a silicon oxide layer by performing deposition of a silicon oxide on a substrate; forming a metal layer by performing deposition of a metal on the silicon oxide layer; forming a metal agglomerate by performing heat treatment on the substrate where the metal layer is formed; and growing a nanowire in an area where the metal agglomerate is formed by performing plasma treatment on the substrate where the metal agglomerate is formed, wherein the nanowire is grown between the metal agglomerate and the substrate. | ||
| 地址 | KR | ||