| 发明名称 |
METHOD OF FORMING OXIDE FILM OF SEMICONDUCTOR ELEMENT |
| 摘要 |
PURPOSE:To eliminate unnecessary current flowing in a semiconductor element during positive oxidation treatment by shortcircuiting the upper and lower surfaces of the element with metallic clip or the like and by conducting the treatment as predetermined in immersion in an electrolyte. |
| 申请公布号 |
JPS51140481(A) |
申请公布日期 |
1976.12.03 |
| 申请号 |
JP19750065024 |
申请日期 |
1975.05.29 |
| 申请人 |
SHARP KK |
发明人 |
YANO MORICHIKA;KURATA YUKIO;MATSUI SADAMASU;YAMAMOTO SABUROU;KOMURO AKIRA |
| 分类号 |
H01L21/31;H01L21/316;H01L33/14;H01L33/20;H01L33/40 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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