| 发明名称 |
COMPLEMENTARY TYPE FIELD EFFECT SEMICONDUCTOR IN TEGRATED CIRCUIT DEVICE |
| 摘要 |
PURPOSE:To obtain a CMOS type IC by providing P type wells in an n-type substrate, providing an n<+> layer in one of them to make an n-MISFET and providing additionally n region and P<+> region in the other to make a P-MISFET. |
| 申请公布号 |
JPS52133762(A) |
申请公布日期 |
1977.11.09 |
| 申请号 |
JP19760050685 |
申请日期 |
1976.04.30 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
IGARASHI HATSUHIDE |
| 分类号 |
H01L21/822;H01L21/8238;H01L27/04;H01L27/092;H01L29/78;H03K19/08;H03K19/094 |
主分类号 |
H01L21/822 |
| 代理机构 |
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代理人 |
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| 地址 |
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