| 发明名称 |
BOLOMETER |
| 摘要 |
A bolometer is described. A bolometer includes a superconductor-insulator-semiconductor-superconductor structure or a superconductor-insulator-semiconductor-insulator-superconductor structure. The semiconductor comprises an electron gas in a layer of silicon, germanium or silicon-germanium alloy in which valley degeneracy is at least partially lifted. The insulator or a one or both of the insulators may comprise a layer of dielectric material. The insulator or a one or both of the insulators may comprise a layer of non-degenerately doped semiconductor. |
| 申请公布号 |
US2016290868(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201415035182 |
申请日期 |
2014.11.04 |
| 申请人 |
THE UNIVERSITY OF WARWICK ;VTT TECHNICAL RESEARCH CENTRE OF FINLAND |
发明人 |
Gunnarsson David;Parker Evan;Prest Martin;Prunnila Mika;Whall Terence |
| 分类号 |
G01J5/04;G01J5/02;G01J5/20;H01L39/22;H01L31/09 |
主分类号 |
G01J5/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bolometer comprising a superconductor-insulator-semiconductor-superconductor structure or a superconductor-insulator-semiconductor-insulator-superconductor structure, wherein the semiconductor comprises an electron gas in a layer of silicon, germanium or silicon-germanium alloy in which valley degeneracy is at least partially lifted. |
| 地址 |
Warwickshire GB |
