Semiconductor structures including carrier wafers and methods of using such semiconductor structures

摘要

A semiconductor structure comprising a carrier wafer and a device wafer. The carrier wafer comprises trenches sized and configured to receive conductive pillars of the device wafer. The carrier wafer and the device wafer are fusion bonded together and back side processing effected on the device wafer. The device wafer may be released from the carrier wafer by one or more of mechanically cleaving, thermally cleaving, and mechanically separating. Methods of forming the semiconductor structure including the carrier wafer and the device wafer are disclosed.

主权项

1. A method comprising:
forming a device wafer, wherein forming the device wafer comprises acts of:
forming a dielectric material over an active surface of a first substrate; andforming conductive pillars on the active surface of the first substrate; forming a carrier wafer, wherein forming the carrier wafer comprises acts of:
forming trenches in a surface of a second substrate;forming bonding surfaces on the surface of the second substrate;forming stress cavities within the substrate proximate the bonding surfaces; andforming a silicon nitride material over the bonding surfaces; inserting the conductive pillars into the trenches; and bonding the bonding surfaces of the carrier wafer with the dielectric material of the device wafer.