| 发明名称 | Method for selective oxide removal | ||
| 摘要 | A method for removing oxide selective to a material comprising at least silicon and at least nitrogen is disclosed, the method comprising providing in a reactor a structure having a surface comprising a region, wherein said region comprises a material comprising at least silicon and at least nitrogen, providing on said structure an oxide layer overlying at least a part of said region, and removing said oxide layer selective to said material by etching, thereby exposing at least a part of said at least overlaid part of said region, wherein said etching is done only by providing an etchant gas comprising boron, whereby a voltage bias lower than 30 V is applied to the structure. | ||
| 申请公布号 | US9502264(B2) | 申请公布日期 | 2016.11.22 |
| 申请号 | US201514827774 | 申请日期 | 2015.08.17 |
| 申请人 | IMEC VZW | 发明人 | Kunnen Eddy;Paraschiv Vasile |
| 分类号 | H01L21/302;H01L21/311;C01B35/06;C09K13/00;H01L21/768 | 主分类号 | H01L21/302 |
| 代理机构 | McDonnell Boehnen Hulbert & Berghoff LLP | 代理人 | McDonnell Boehnen Hulbert & Berghoff LLP |
| 主权项 | 1. A method for removing oxide selectively to a material comprising at least silicon and at least nitrogen, the method comprising: (a) providing in a reactor a structure having a surface comprising a region, wherein said region comprises a material comprising at least silicon and at least nitrogen; (b) providing on said structure an oxide layer overlying at least a part of said region; and (c) removing said oxide layer selective to said material by etching, thereby exposing at least a part of said at least overlaid part of said region, wherein said etching is performed with an etchant gas comprising boron in the presence of a voltage bias lower than 30 V that is applied to the structure. | ||
| 地址 | Leuven BE | ||