Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching

摘要

A method includes receiving a voltage and current measured at an output of an RF generator of a first plasma system and calculating a first model etch rate based on the voltage and current, and a power. The method further includes receiving a voltage and current measured at an output of the RF generator of a second plasma system, determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system, and comparing the second model etch rate with the first model etch rate. The method includes adjusting a power at the output of the RF generator of the second plasma system to achieve the first model etch rate associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate. The method is executed by a processor.

主权项

1. A method for performing chamber-to-chamber matching of etch rates based on a model etch rate, the method comprising:
receiving a voltage and current measured at an output of a radio frequency (RF) generator of a first plasma system; calculating a first model etch rate based on the voltage and current, and a power, the power calculated based on the voltage and current and a phase between the voltage and current; receiving a voltage and current measured at an output of an RF generator of a second plasma system; determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system; comparing the second model etch rate with the first model etch rate; and adjusting a power at the output of the RF generator of the second plasma system to achieve the first model etch rate associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate, wherein the method is executed by a processor.