发明名称 |
Non-volatile memory in an integrated circuit |
摘要 |
A method comprising the steps of depositing a first and second polysilicon layer, separated by an oxide layer; selectively etching the second polysilicon layer to form first gate regions; forming first substrate regions in the substrate and laterally in relation to the first gate regions; selectively etching the first polysilicon layer to form second gate regions of a length greater than the first gate regions; and forming in the substrate, laterally in relation to the second gate regions and partially overlapping the first substrate regions, second substrate regions of a higher doping level than the first substrate regions.
|
申请公布号 |
US5568418(A) |
申请公布日期 |
1996.10.22 |
申请号 |
US19950447772 |
申请日期 |
1995.05.23 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
CRISENZA, GIUSEPPE;CLEMENTI, CESARE |
分类号 |
H01L21/336;H01L21/8247;H01L27/115;H01L29/423;(IPC1-7):G11C11/34 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|