| 摘要 |
PURPOSE:To decrease the power consumption as well as to accelerate the switching action by constituting the semiconductor device with the PNP-type and NPN-type bipolar transistor and connecting the collector of one element with the base of the other element. CONSTITUTION:N<->-type layer 22 is epitaxial-grown on N<+>-type Si substrate 21, N-type base region 45 is formed within layer 22, and P<+>-type collector region 34 and P<++>-type emitter region 49 are provided within region 45. Thus, a PNP-type transistor Tr1 is obtained. Then P-type base region 41 reaching substrate 21 is formed within layer 22 which is distant away from the above mentioned regions; P<+>-type base compensation region 35 and N-type collector region 46 are formed within region 41; and NPN-type Tr2 is formed under region 41 as the emitter region. After this, region 34 of Tr1 and region 35 of Tr2 are connected via poly-crystal Si layer 32 with electrode 54 attached there. At the same time, electrode 55 is attached to region 46 via poly-crystal Si layer 42, and electrode 56 is attached to region 49 via poly-crystal Si layer 47. |
