| 摘要 |
An insulated-gate field effect transistor which is adapted for detecting and measuring various chemical properties such as ion activity in a solution. The transistor has a chemically sensitive layer (22) which overlies a portion of a substrate (2) other than that covered by the gate insulator (6). When this chemically sensitive layer (22) is exposed to a solution (32) or other substance, the electric field in the substrate (2) is modified which changes the conductance of the channel between a source region (4) and a drain region (8). The change in conductance is related to the chemical exposure and can be detected with a current meter (52). |
