Edge termination structure for a power integrated device and corresponding manufacturing process

摘要

An integrated device has: a structural layer of semiconductor material doped with a first conductivity type and having a top surface defining a plane; a functional region, doped with a second conductivity type, arranged in an active area of the structural layer at the top surface, in the proximity of an edge area of the integrated device, which externally surrounds the active area; and an edge termination region, doped with the second conductivity type, joined to the functional region and arranged in the edge area. The edge termination region has a doping profile and a junction depth that vary in a first direction parallel to the plane.

主权项

1. An integrated device, comprising:
a structural layer, including semiconductor material doped with a first conductivity type and having a top surface defining a plane; a functional region doped with a second conductivity type and arranged in an active area of said structural layer at said top surface, near an edge area that externally surrounds said active area; and an edge termination region doped with said second conductivity type, joined to said functional region, and arranged in said edge area, wherein said edge termination region has a doping profile and a junction depth that vary along a first direction parallel to said plane, wherein: said edge termination region further has a doping profile that varies in a second direction orthogonal to said plane; and said edge terminal region comprises first and second edge termination portions, the first edge terminal portion contacting said functional region and having a first junction depth in said structure layer and a first width in the first direction, the second edge terminal portion contacting and extending under the first edge terminal portion and having a second width in the first direction that is different from the first width.