发明名称 D.C. Amplifier with improved characteristics with respect to temperature
摘要 A D.C. amplifier for low-level currents includes an input stage having first and second cascode mounted transistors and a bis circuit adapted to maintain the base and collector potentials of the first transistor very close to each other over a predetermined temperature range. The amplifier is particularly suited for use in a flame detection device and, in addition, may include a protection circuit for the base-emitter junction of the first transistor.
申请公布号 US4207480(A) 申请公布日期 1980.06.10
申请号 US19780913338 申请日期 1978.06.07
申请人 CONSTRUCTIONS ELECTRIQUES R V 发明人 SIMEAU, BERNARD J
分类号 F23N5/12;G08B17/00;H03F1/22;H03F1/30;H03F3/343;(IPC1-7):H01H37/32;H03F3/04 主分类号 F23N5/12
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