发明名称 |
D.C. Amplifier with improved characteristics with respect to temperature |
摘要 |
A D.C. amplifier for low-level currents includes an input stage having first and second cascode mounted transistors and a bis circuit adapted to maintain the base and collector potentials of the first transistor very close to each other over a predetermined temperature range. The amplifier is particularly suited for use in a flame detection device and, in addition, may include a protection circuit for the base-emitter junction of the first transistor.
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申请公布号 |
US4207480(A) |
申请公布日期 |
1980.06.10 |
申请号 |
US19780913338 |
申请日期 |
1978.06.07 |
申请人 |
CONSTRUCTIONS ELECTRIQUES R V |
发明人 |
SIMEAU, BERNARD J |
分类号 |
F23N5/12;G08B17/00;H03F1/22;H03F1/30;H03F3/343;(IPC1-7):H01H37/32;H03F3/04 |
主分类号 |
F23N5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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