| 摘要 |
PURPOSE:To prevent rubber cracking, peeling off and defective insulation, by the method wherein the shape of the rubber surface which insulates the element side surface of a semiconductor device is depressed to match the shape of the side surface of the element, and thereby the thermal stress on the boundary surface is reduced. CONSTITUTION:SCR element 1 is fitted to electrode 2. Depression 6 of side surface 7 of element 1 is coated with insulating rubber 3. Its shape is matched with that of the side surface of the element. By this structure, the maximum value of the shearing stress produced on the boundary surface between element and rubber drops to about 60% of the case where depression 6 is absent. As a result, peeling is prevented. Further, when a curved surface is provided on the bottom of depression 6, the concentration of the stress is prevented, so that damage to rubber 3 is prevented. |
