摘要 |
For the preparation of coarsely crystalline or monocrystalline metal layers by vapour deposition or atomisation of a metal on a substrate, an amorphous layer of Ta, W, Cu, Co, Al or an aluminium alloy or a Ti-V alloy with a V content of >70 atom% is first deposited on a substrate cooled to a temperature below -90 DEG C. The amorphous layer is then recrystallized by heating the substrate with the deposited metal layer to not more than 300 DEG C. |