发明名称 PROCESS FOR THE PRODUCTION OF A COARSELY CRYSTALLINE OR MONOCRYSTALLINE METAL LAYER ON A SUBSTRATE
摘要 For the preparation of coarsely crystalline or monocrystalline metal layers by vapour deposition or atomisation of a metal on a substrate, an amorphous layer of Ta, W, Cu, Co, Al or an aluminium alloy or a Ti-V alloy with a V content of >70 atom% is first deposited on a substrate cooled to a temperature below -90 DEG C. The amorphous layer is then recrystallized by heating the substrate with the deposited metal layer to not more than 300 DEG C.
申请公布号 GB1576707(A) 申请公布日期 1980.10.15
申请号 GB19780025267 申请日期 1978.05.31
申请人 SIEMENS AG 发明人
分类号 C30B23/08;C23C14/14;C23C14/54;C30B23/02;C30B23/06;C30B28/12;C30B29/02;C30B29/52;H01C17/06 主分类号 C30B23/08
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