| 摘要 |
PURPOSE:To obtain the adding material without fluctuation in impurity distribution for the subject compound semiconductor by a method wherein radiant rays such as a fast-neutron, a proton and the like are irradiated on the semiconductor, a portion of semiconductor consisting elements is converted into a heterologous element which functions as acceptor impurities by a neuclear reaction and then an annealing is performed. CONSTITUTION:The compound semiconductor is consisted of two elements of mass numbers M1 and M2, and atomic numbers A and B, and accordingly, the neuclear reaction shown by formulas I is generated by irradiating a fast-neutron on the compound semiconductor and the neuclear reaction shown by formulas II is generated by irradiating a proton. Taking advantage of these reactions, a portion of the semiconductors A and B is converted into a heterologous element (A-1, B-1), an acceptor impurity region having a uniform density is generated on the desired section of an ingot, then an annealing is performed at a temperature of 300-1,000 deg.C for 1-50min and the generated crystal defects are removed by irradiating a radiant ray. |
