High radiance LED's.

摘要

In a surface emitting light emitting diode (LED), light propagating in the plane of an active pn junction region (16) is utilized by turning it into the surface emitting direction using a mirror inclined at 45 DEG to the plane of the junction. To form the mirror, a passivating spot (34) is deposited on the semiconductor crystal and the semiconductor surface is anodized, the resulting oxide layer (22) being simultaneously etched away leaving, under a central region of the spot, a mesa (20) having a curved wall (33), the tangent to which is at 45 DEG to the plane of the junction region (16) at its boundary. An acid is selected which both oxidizes the semiconductor and etches away the oxide (22) as it is produced, thereby permitting a continuous and clean process.