| 摘要 |
PURPOSE:To improve the degree of integration by forming a groove extending in the direction that partitions both a heating element mounting region and a temperature dependence element mounting region to the back of an insulating wiring substrate between both regions in the hybrid IC. CONSTITUTION:A heating element and a temperature dependence element 3 are set up onto one insulating wiring substrate 11 obtained by shaping a wiring layer 10 to the main surface (the surface) of an insulating ceramic substrate 9. The groove 14 extending near both side edges of the wiring substrate 11 so as to partition both regions 12, 13 is formed to the back of the wiring substrate 11 between the heating element mounting region 12 and temperature dependence element mounting region 13 of the wiring substrate 11. Accordingly, since the groove 14 is shaped and a thin section 19 having large thermal resistance is formed to the wiring substrate 11, a distance between the heating element mounting region 12 and the temperature dependence element mounting region 13 can be brought near only by correspondence to the increase of the thermal resistance, and the degree of integration can be improved. |
