| 摘要 |
A self-protecting semiconductor device is provided wherein a region of localized increased avalanche multiplication factor is provided to insure that the maximum current density at the onset of avalanche voltage breakdown will occur in a known region. This current is utilized to turn-on the device in a controlled manner. In accordance with a presently preferred embodiment of this invention, the avalanche multiplication factor is increased by providing an etched down region in the gate region of the device, the etch extending at least into the depleted region proximate to the forward blocking semiconductor junction underlying the gate region of the device. |
