| 摘要 |
PURPOSE:To make it possible to uniformly heat a sample even in a vacuum and to reduce gas emission, by forming a resistive film on the reverse surface of a strip-like sapphire plate as a heating element, and making the heat generated by the resistive film differ in temperature between the end portion and the inner portion of the sapphire plate. CONSTITUTION:A thin-film heating member 4 of W is energized from both ends thereof by means of a power source 9, thereby to heat a strip-like sapphire plate 6. A semiconductor substrate 7 is heated by the heat conducted from the plate 6. At the same time, the substrate 7 is also heated by the radiation from the heating member 4 through the plate 6. In this case, since the substrate 7 is in plane contact with the plate 6 and the member 4 generates heat from the entire surface thereof, the substrate 7 is uniformly heated. It is possible to further improve the uniformity of temperature within the entire heating surface by making the temperature at the end portion of the member 4 higher than that at the central portion of the member 4. |
