FABRICATION OF HIGH MELTING POINT METAL NITRIDE FILM

摘要

PURPOSE:To fabricate a coat having good conductivity by performing sputtering with using activated nitrogen gas and applying high-frequency power. CONSTITUTION:A reaction chamber 13 contains a Ti target 14 and a sample 15. Mixed gas of argon and nitrogen to be introduced into the reaction chamber 13 is introduced into an activation chamber 21 in advance. The nitrogen gas is activated by a microwave oscillator 22 attached to side wall of the activating chamber 21 and the activated gas is introduced into the reaction chamber 13. After that, high-frequency power from a high-frequency power source 12 is applied to coat a TiN film on surface of the sample 15. This method offers the TiN film having good conductivity.