| 摘要 |
PURPOSE:To form an insulating film including impurities on a substrate readily, by performing the high frequency sputtering of the target of an insulating film in a gas including impurities. CONSTITUTION:A gas including phosphorus other than argon, e.g., phosphine, is introduced from a gas introducing port. Argon plasma 8 is yielded from argon in a high frequency electric field. Argon ions impinge on silicon oxide target 6, and the silicon oxide is sputtered. The atoms of part of the sputtered silicon and the atoms of oxygen are reacted with the atoms of the phosphorus activated in the plasma, and a mixture of the silicon oxide and phosphorus oxide is formed. The mixed film of the silicon oxide and the phosphorus oxide, i.e., a phosphorus glass film, is formed on a substrate 7. Therefore, the concentration of the phosphorus is accurately controlled by the flow rate of the phosphine. |
