| 摘要 |
PURPOSE:To inhibit the generation of cracks on a silicon pellet and a resin sealing section by bringing a thermal expansion coefficient of a lead frame material to be approximately intermediate value of the thermal expansion coefficients of the pellet and the resin sealing member constituting a resin seal type semiconductor device. CONSTITUTION:A thermal expansion coefficient of a lead section 11 is kept within a range of 7X10<-6>/ deg.C or 14X10<-6>/ deg.C. Said lead section 11 is prepared by using an alloy such as an alloy consisting of 3-8% copper, 25-30% nickel and iron as the remainder in weight. Accordingly, strain between a semiconductor pellet 13 and the lead frame 11 and strain between the lead frame 11 and a resin sealing section 15 are dispersed by bringing the thermal expansion coefficient of the lead frame section 11 close to the approximately intermediate value of that (approximately 3X10<-6>/ deg.C) of silicon and that (20X10<-6>/ deg.C) of a resin, and the generation of cracks in the pellet and the resin can be removed. |
