METHOD FOR FORMING SPACERS FOR A TRANSISTOR GATE

摘要

A method for forming spacers of a gate of a transistor is provided, including forming a protective layer covering the gate; after the forming the protective layer, at least one step of forming a carbon film on the transistor; removing portions of the carbon film located on a top and on either side of the gate; modifying the protective layer on the top of the gate and on either side of the gate; and removing the modified protective layer.