| 摘要 |
PURPOSE:To simplify the manufacturing process of CMOS devices of the offset gate structure by a method wherein each of the side walls are independently formed on the sides of the gate electrodes of a P-MOS transistor and then of an N-MOS transistor. CONSTITUTION:A P well 2 and polycrystalline silicon gate electrode 5 are formed on an N type silicon semiconductor substrate 1. With a silicon nitride film 31 acting as a mask, a low-concentration boron-diffused layer 33 is formed. A process follows wherein side walls 34a composed of SiO2 are formed on the sides of the gate electrode 5 and a high-concentration boron-diffused layer 36 is formed with the side walls 34a serving as a mask, for the formation of source/ drain regions 37a, 37b for a P-MOS transistor constituted of the diffused layers 33, 36. A silicon nitride film 38 serves as a mask in a process for the formation of a low-density phosphur-diffused layer 41. Side walls 42a are formed on the sides of the gate electrode 5 and the side walls 42a serve as a mask in a process for the formation of a high-concentration arsenic-diffused layer 44 for the completion of source/drain regions 45a, 45b for an N-MOS transistor constituted of the diffused layers 41, 44. |
