| 发明名称 |
OHMIC CONTACT TO P-TYPE INP OR INGAASP |
| 摘要 |
An ohmic contact to a semiconductor device comprising p-type InP is formed by sequentially depositing beryllium-gold and gold layers on InP and then heat-treating the device at a temperature less than 440 degrees C. An ohmic contact to p-type InGaAsP can be similarly formed. |
| 申请公布号 |
DE3071336(D1) |
申请公布日期 |
1986.02.20 |
| 申请号 |
DE19803071336 |
申请日期 |
1980.08.22 |
| 申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
KERAMIDAS, VASSILIS GEORGE;MCCOY, ROBERT JACKSON;TEMKIN, HENRYK |
| 分类号 |
H01L33/00;H01L21/28;H01L21/285;H01L29/43;H01L29/45;H01S5/00;H01S5/042;(IPC1-7):H01L23/48;H01L29/40;H01L29/54 |
主分类号 |
H01L33/00 |
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