发明名称 SEMICONDUCTOR PRESSURE SENSOR
摘要 PURPOSE:To enable the reduction in the number of components and in cost by a method wherein a gate electrode is arranged across a gate insulation film between a pair of piezo resistors constituting opposed sides of a bridge circuit, and desired voltage is impressed thereon. CONSTITUTION:Electrode pads 8a, 8n located at both ends of an array of electrode pads 8a-8n are connected to the positive side input terminal and the negative side input terminal via conductive parts 9a, 9b, respectively. When a required voltage is impressed between input terminals A, B of the bridge circuit, a required voltage is at the same time impressed on a diffused resistance region 7 from one end to the other end, and a negative voltage corresponding to the distance from one end of the region 7 is induced also in each of the pads 8a-8n. A gate electrode 6 is joined to an electrode pad 8i and kept at a voltage equal to that induced in the electrode pad 8i. A channel resistance generates between piezo resistors 3a, 3b, i.e. between output resistors C, D, and this device is made equivalent to the conventional case of interposing a resistor between output terminals.
申请公布号 JPS61134078(A) 申请公布日期 1986.06.21
申请号 JP19840257166 申请日期 1984.12.04
申请人 SANYO ELECTRIC CO LTD 发明人 NAKANO ISAO
分类号 G01L9/00;G01L9/04;G01L9/06;H01L29/84 主分类号 G01L9/00
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