| 摘要 |
PURPOSE:To provide a diode with a large capacitance irrespective of the small area, by forming a Schottky junction at the side face and bottom face of a trench. CONSTITUTION:This diode comprises a P-type Si substrate 1, N<+> buried layer 2 serving as a cathode of the diode, element separating insulating film 3, epitaxial Si layer 4 having impurities diffused so as to attain appropriate characteristics, platinum silicide layer 5 formed by reacting platinum and the epitaxial Si layer 4, barrier metal layer 6 formed by a CVD method, and Al film 7 formed by a CVD method. Since the side face of the trench can be uti lized for the diode, the diode having a large capacitance can be formed irrespec tive of the small area. |
