MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To form a growing film with excellent crystallizing property by a method wherein II-VI group compound semiconductor containing Zn as constituent element and mixed crystal thin film thereof are produced by means of heating R2Zn the R2S containing excessive low point constituent for reaction and maturization as well as vapor-thermal decomposing the resultant organic zinc compound as source. CONSTITUTION:R2Zn and R2S containing excessive low boiling point constituent with 1.1-1.2% of equivalent ratio between low boiling point constituent and high boiling point constituent are mixed with each other to make them react throughly to each other for around 2 hours at 10-35 deg.C/hour not exceeding the boiling point of low boiling point constituent. Next the temperature is slowly raised at the ratio of 10-15 deg.C/hour to complete the reaction and then the constituents are matured at 30-70 deg.C for 30-60 minutes, finally removing any excessive constituent by distillation. When GaAs element in the MIS structure thus constituted is provided with an electrode to be impressed with bias voltage in the normal direction, luminescence can be observed from around 1-2 V reaching the peak near 460-470 mum at room temperature with quantum effi ciency amounting to around 10<-3>.