发明名称 AMORPHOUS SILICON FILM PRODUCTION DEVICE
摘要 PURPOSE:To reduce the accumulation of a-Si flake in a reaction container by a method wherein many permiation holes on the surface on a substrate side of an electrode facing the substrate, and the permiation holes are connected to a exhaust pipe so as to prevent the temperature decrease of the reaction gas. CONSTITUTION:The upper surface of a counter electrode 3 has a hole 32 formed as a multi-porous electrode plate 31 which is made of, for example, a mesh- structured metallic plate. The internal space of the electrode 3 is connected to a discharge pipe 10 which passes through a reaction container 1. Then, reac tion gas which is introduced through a gas introduction hole 5 is excited via plasma and discharged by the discharge pipe 10 through the hole 32 under the electrode plate 31. Thus, the temperature drop of the reaction gas is prevented, thereby reducing the accumulation of the a-Si flake within the reac tion container 1.
申请公布号 JPS61251121(A) 申请公布日期 1986.11.08
申请号 JP19850092782 申请日期 1985.04.30
申请人 FUJI ELECTRIC CO LTD 发明人 MURAMATSU YOSHIHISA
分类号 H01L31/04;H01L21/205 主分类号 H01L31/04
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