| 摘要 |
PURPOSE:To improve the measurement accuracy of the pattern shift amount by coating a pattern having a graduated coordinate axis on a substrate. CONSTITUTION:A substrate 20 undergoes the insulative isolation embedding diffusion process for element's bottom section to form an embedded layer 21. Then, the substrate 20 is coated with a pattern 22 having a graduated coordinate axis. When the whole surface undergoes epitaxial growth process, the pattern having a graduated coordinate axis is transferred on an epitaxial growth layer 25 as a congruence recess section pattern image. The pattern shift amount and the shift direction can be quantitatively grasped by comparing this transfer pattern image with the mask pattern image used at the time of the embedded diffusion process. |
