| 摘要 |
PURPOSE:To improve the insulating property between an electrode and a source and drain region in the degree higher than the case where a polous CVD silicon oxide film is used on the side face of a gate electrode by a method wherein said side face is formed using the thermally oxided silicon oxide film obtained by thermally oxidizing polycrystalline silicon on the side face of the gate electrode. CONSTITUTION:First, the thermally oxided silicon oxide film 2, to be turned to a gate oxide film, is provided on a silicon substrate 1, and the polycrystalline silicon 3 of the prescribed shape, to be turned to a gate electrode, is formed thereon. Then, the polycrystalline silicon 3 is oxidized by heat, and a silicon oxide film 100 is formed thereon. Subsequently, a polycrystalline silicon film 4 is deposited, it is converted to a silicon oxide film by performing a thermal oxidization in the mixed gas atmosphere of hydrogen and oxygen, and the polycrystalline silicon 3 is coated with a thermally oxided silicon oxide film 101. Then, the thermally oxided silicon oxide film 101 is etched, and the side wall 101' of the thermally oxided silicon oxide film is formed on the side face only of the polycrystalline silicon 3 which is turned to a gate electrode, thereby enabling to reduce the interfacial reaction between a high melting point metal 5 and the above-mentioned side wall by using the homogenous silicon oxide film 101' as a side wall which is formed by thermally oxidizing the polycrystalline silicon, to prevent the deterioration of insulating property and to improve the yield of production and the reliability of the semiconductor device.
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