| 摘要 |
The bidirectional power MOSFET device has a semiconductor body having one principal face (14) and a pair of principal terminal regions (16,18) of given conductivity type extending from the surface towards the interior. A pair of principal terminal electrodes (26,28) are respectively in ohmic contact with the principal terminal regions. A semiconductor base region (12) of opposite type conductivity separates the principal zones, and, under the influence of an electric field, presents an inversion layer having a bond (24) of first type conductivity extending between the principal terminal regions and adjacent to the principal face. An insulating trigger layer (34) is disposed on the principal face above the band and a conducting trigger electrode (36) is placed on the insulating trigger layer. A recombination region (44) is enclosed in the base region between the principal regions. This region by means of impurities or radiation damage imposes a relatively short lifetime on the majority carriers of the base region in order to avoid excessive concentrations of majority carriers in the recombination region so that the functioning of the principal terminal regions and of the base region as a parasitic bipolar transistor is made impossible. At the time of blocking of the power MOSFET, the excessive majority carriers of the base region are rapidly recombined. At each principal region the recombination region extends from the principal face to a depth at least equal to the depth of the adjacent principal terminal region. |
