| 摘要 |
PURPOSE:To enable machining of a semiconductor with high precision, high efficiency, and high yield, by a method wherein, when a grinding stone is simultaneously cut in plural layers of a multilayer structure semiconductor element, a radial moving table is driven through a cylinder and a spring. CONSTITUTION:A rectifying device 1, being a multilayer structure semiconductor element, is adsorbed to a rotary device 2 to rotate the rotary device by means of a motor 3. As a grinding stone 12a is rotated at a high speed, a radial moving table 5 is moved to a machining position, a radial feed table 11 is obliquely fed by means of a driving part 13, and the peripheral surface of a rectifying element 1 is ground in the shape of a truncated cone. In this case, when the grinding stone is simultaneously cut through to plural layers, grinding resistance is widely changed. In which case, in the driving part 13, a support lever 21, supporting a feed nut 19, is pressed against a return stopper 23 with a force higher than grinding resistance by means of a cylinder 24. When the number of layers is increased, operation of the cylinder 24 is stopped, the support lever 21 is moved forward and backward by means of a balance between a compression spring 22 and grinding resistance, and the overload of the grinding stone 12a is prevented from occurring. This constitution improves productivity. |
