MODEL FOR ACCURATE PHOTORESIST PROFILE PREDICTION

摘要

A photoresist modelling system includes a mathematical model for a photolithography process. The mathematical model may be executable using a computer processor. The mathematical model may be used to model a photoresist as formed on a semiconductor wafer surface. A blocked polymer concentration gradient equation may be implemented into the mathematical model. The blocked polymer concentration gradient equation may describe an initial concentration gradient of a blocked polymer in the photoresist being modelled by the mathematical model.