| 摘要 |
PURPOSE:To avoid difference in hole-absorbing amount and to prevent variances in amount of electric charge stored among various charge storing regions, by electrically connecting a channel stopping region to a forward electrode arranged on the forward light-receiving face in one image pickup region over the section where a electric charge storing region is arranged. CONSTITUTION:A P-type first region 3 which is buried and a channel stopping region LCS provide a P-type region extending vertically from the region LCS to the region 3 at an end of extension of the region LCS, for example, so that the region LCS is electrically connected to the region 3. A required positive voltage of 10V for example is applied to a basic region 2 having a first type of conductivity. In this device, if electrons produced by a certain amount of light received by the device exceed an amount of electric charge to be stored by each storing region 5 and exceeds an overflow barrier produced by the P-type first region 3, these excessive electrons are absorbed by an N-type basic region 2 while holes are absorbed by a forward electrode 9 through the channel stopping region LCS. |
