发明名称 |
Semiconductor memory device with a self-testing function. |
摘要 |
<p>A semiconductor memory device comprises a self-test circuit (17, 18, 19, 20). The self-test circuit starts to operate in response to a control signal. The self-test circuit controls the operation of data writing and data reading so that data are written into the memory cells in the memory cell array and read out the data from the memory cells. The self-test circuit checks whether or not an error is contained in the read data by comparing the read data with the write data.</p> |
申请公布号 |
EP0263312(A2) |
申请公布日期 |
1988.04.13 |
申请号 |
EP19870113138 |
申请日期 |
1987.09.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FURUYAMA, TOHRU;NATORI, KENJI |
分类号 |
G06F11/267;G11C29/20;G11C29/44 |
主分类号 |
G06F11/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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