| 摘要 |
PURPOSE:To prevent the breakage of a semiconductor generating in a working process and an isolating process as well as to cut down the period required for the isolating operation by a method wherein a protective film is formed on a semiconductor, the semiconductor is provided annexingly on a fixing film through the intermediary of said protective film, and the processed semiconductor is separated from a jig using a solvent with which the protective film and the fixing film can be removed simultaneously. CONSTITUTION:A protective film 5 is formed at least on the whole lower surface of a wafer 3, the protective film-attached wafer 3 is fixed to a jig 1 by a fixing film 2, and a thickness-reducing process and other processes are performed on the exposed surface of the wafer 3. After said processes have been finished, an assembled body is placed in a melting vessel 4, and the protective film and the fixing film are melted simultaneously using a single or mixed solution with which said films can be dissolved at the same time. When a polymethacrylic acid protective film and a wax fixing film are used, the mixed solution consisting of alcohol which dissolves photoresist and trichloroethylene to be used to dissolve wax can be used favorably. |
