| 摘要 |
PURPOSE:To make the soft error resistance high by inserting resistors and transistors connected in parallel between the drain and the gate where the flip flops included in a memory cell are cross-connected, and simultaneously connecting the respective gates of the transistors to a word line. CONSTITUTION:In the store state, a word line W is set to a 'L'-level and transistors Q7, Q8 are in an OFF state, so common node points a, c are equivalently connected by a resistor R1, and common node points b, d are equivalently connected by a resistor R2. In the read state, the word line W is set to a 'H'- level, so the transistors Q7, Q8 come into an ON state. For this, the respective resistance values between the common node points a, c and between the common node points b, d remarkably decrease. In the write state, since the word line W is set to the 'H'-level, the resistances of the transistors Q7, Q8 have remarkably decreased. With this, a device having a high soft error resistance but having a fast transient response at the writing time can be obtained.
|
