Field effect transistor structure with an isolated gate, and method of production.

摘要

The invention relates to integrated circuits incorporating field- effect transistors with an insulated gate. To construct the gate (G1, G2) of these transistors, it is proposed to use the superposition of a chromium layer (48) and of a tungsten layer (50) which proves to be particularly well suited to solving not only the general problem of the electrical conductivity of the gate used as conductive element, but also the specific problems of the gates employed as transistor control elements. These problems are in particular the physio-chemical compatibility between the gate material and the gate insulation which is very thin and must not be impaired, and also the possibility of obtaining adequate threshold voltages for p channel and n channel transistors without channel dopings harmful to correct operation (especially in CMOS technology). <IMAGE>